Controlling the Spin Polarization of the Electron Current in a Semimagnetic Resonant-Tunneling Diode

Abstract

The spin filtering effect of the electron current in a double-barrier resonant-tunneling diode (RTD) consisting of ZnMnSe semimagnetic layers has been studied theoretically. The influence of the distribution of the magnesium ions on the coefficient of the spin polarization of the electron current has been investigated. The dependence of the spin filtering degree of the electron current on the external magnetic field and the bias voltage has been obtained. The effect of the total spin polarization of the electron current has been predicted. This effect is characterized by total suppression of the spin-up component of electron current, that takes place when the Fermi level coincides with the lowest Landau level for spin-up electrons in the RTD semimagnetic emitter.

References in corpus (2)

• Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode
• Spin filtering and magnetoresistance in ballistic tunnel junctions

Cited by in corpus (8)

• Semiconductor Spintronics
• Resonant Tunneling Magneto Resistance in Coupled Quantum Wells
• Theory of digital magneto resistance in ferromagnetic resonant tunneling diodes
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• Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode
• Zero field spin polarization in a 2D paramagnetic resonant tunneling diode
• Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode
• Proposal for a digital converter of analog magnetic signals