Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells
arXiv:cond-mat/0308420 · doi:10.1016/j.ssc.2003.08.022
Abstract
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.
arXiv comment3 pages, 3 figures
References in corpus (3)
Cited by in corpus (13)
- Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors
- Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures
- First-principles envelope-function theory for lattice-matched semiconductor heterostructures
- Terahertz Photogalvanic Spectroscopy of Three Dimensional Topological Insulators
- Orbital mechanism of the circular photogalvanic effect in quantum wells
- Subnanosecond Ellipticity Detector for Laser Radiation (second version, extended)
- Giant terahertz photoconductance of tunneling point contacts
- All-electric detectors of the polarization state of terahertz laser radiation (extended version)
- Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor
- Quadratic response theory for spin-orbit coupling in semiconductor heterostructures
- Observation of anomalously strong penetration of terahertz electric field through terahertz-opaque gold films into a GaAs/AlGaAs quantum well
- Nonlinear response functions and disorder: the case of photogalvanic effect
- Enhanced detection of circularly polarized photons with topological materials