Electron and Hole Spin Splitting and Photogalvanic Effect in Quantum Wells

Abstract

A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. It is shown that the photocurrent value and direction depend strongly on the form of the spin-orbit interaction. The currents induced by structure-, bulk-, and interface-inversion asymmetry are investigated. The photocurrent excitation spectra caused by spin splittings in both conduction and valence bands are calculated.

7 pages, 3 figures

References in corpus (1)

• Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures

Cited by in corpus (12)

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• Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells
• Spin current injection by intersubband transitions in quantum wells
• First-principles envelope-function theory for lattice-matched semiconductor heterostructures
• Deduction of Pure Spin Current from Spin Linear and Circular Photogalvanic Effect in Semiconductor Quantum Wells
• Temperature-induced inversion of the spin-photogalvanic effect in WTe${}_2$ and MoTe${}_2$
• Orbital mechanism of the circular photogalvanic effect in quantum wells
• Manipulating the spin texture in spin-orbit superlattice by terahertz radiation
• Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime
• Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of bandmixing
• All-optically induced currents resulting from frequency modulated coherent polarization
• Quadratic response theory for spin-orbit coupling in semiconductor heterostructures