New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime

Abstract

We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.

accepted proceedings of EP2DS-15 (to be published in Physica E)

References in corpus (3)

• Probing the plateau-insulator quantum phase transition in the quantum Hall regime
• Establishing a non-Fermi liquid theory for disordered metals near two dimensions
• Evidence for a Quantum Hall Insulator in an InGaAs/InP Heterostructure

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• Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime
• Observation of the quantized Hall insulator in the quantum critical regime of the two-dimensional electron gas
• An experimental study on $\Gamma$(2) modular symmetry in the quantum Hall system with a small spin-splitting
• Characterization of the Quantized Hall Insulator Phase in the Quantum Critical Regime
• Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime
• Mapping the Current-Current Correlation Function Near a Quantum Critical Point
• Possible existence of a band of extended states induced by inter-Landau-band mixing in quantum Hall system
• A microscopic model for the magnetic field driven breakdown of the dissipationless state in the integer and fractional quantum Hall effect