15 citations · 45 across the 5 of their papers we have counts for
5 papers
Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
V. A. Kulbachinskii, I. S. Vasil'evskii, R. A. Lunin +5
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels…
New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime
L. A. Ponomarenko, D. T. N. de Lang, A. de Visser +4
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two di…
Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation
V. A. Kulbachinskii, R. A. Lunin, V. A. Rogozin +4
We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thicknes…
Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures
V. A. Kulbachinskii, V. G. Kytin, A. V. Golikov +5
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densitie…
Sn delta-doping in GaAs
V. A. Kulbachinskii, V. G. Kytin, R. A. Lunin +7
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping dens…