The effect of the spin-orbit interaction on the band gap of half-metals

Abstract

The spin-orbit interaction can cause a nonvanishing density of states (DOS) within the minority-spin band gap of half-metals around the Fermi level. We examine the magnitude of the effect in Heusler alloys, zinc-blende half metals and diluted magnetic semiconductors, using first-principles calculations. We find that the ratio of spin-down to spin-up DOS at the Fermi level can range from below 1% (e.g. 0.5% for NiMnSb) over several percents (4.2% for (Ga,Mn)As) to 13% for MnBi.

arXiv comment5 pages, 3 figures

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• Ab-initio design of half-metallic fully-compensated ferrimagnets: the case of Cr${}_2$MnZ (Z= P, As, Sb, Bi) compounds
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• Thermal collapse of spin-polarization in half-metallic ferromagnets
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• Stability of ferromagnetism in the half-metallic pnictides and similar compounds: A first-principles study
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• A review of the electronic and magnetic properties of tetrahedrally bonded half-metallic ferromagnets
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• Ab-initio determined electronic and magnetic properties of half-metallic NiCrSi and NiMnSi Heusler alloys; the role of interfaces and defects
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• Phase stability and the effect of lattice distortions on electronic properties and half-metallic ferromagnetism of Co2FeAl Heusler alloy: An ab initio study
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• Spin-polarized ballistic conduction through correlated Au-NiMnSb-Au heterostructures
• Above room-temperature two-dimensional ferromagnetic half-metals in Mn-based Janus magnets
• Effect of chemical disorder on NiMnSb investigated by Appearance Potential Spectroscopy: a theoretical study
• Unravelling the interplay of geometrical, magnetic and electronic properties of metal-doped graphene nanomeshes
• Spin gapped metals: A novel class of materials for multifunctional spintronic devices
• Restrictions on modeling spin injection by resistor networks
• Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface
• Disorder Enhanced Spin Polarization in Diluted Magnetic Semiconductors