Interplay of growth mode and thermally induced spin accumulation in epitaxial Al/CoTiSi/Al and Al/CoTiGe/Al contacts
arXiv:1402.4396 · doi:10.1103/PhysRevB.89.184422
Abstract
The feasibility of thermally driven spin injectors built from half-metallic Heusler alloys inserted between aluminum leads was investigated by means of {\em ab initio} calculations of the thermodynamic equilibrium and electronic transport. We have focused on two main issues and found that: (i) the interface between Al and the closely lattice-matched Heusler alloys of type CoTi ( Si or Ge) is stable under various growth conditions; and (ii) the conventional and spin-dependent Seebeck coefficients in such heterojunctions exhibit a strong dependence on both the spacer and the atomic composition of the Al/Heusler interface. The latter quantity gives a measure of the spin accumulation and varies between ~V/K and ~V/K near ~K, depending on whether a Ti-Ge or a Co-Co plane makes the contact between Al and CoTiGe in the trilayer. Our results show that it is in principle possible to tailor the spin-caloric effects by a targeted growth control of the samples.
16 pages, 13 figures
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