The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As
arXiv:cond-mat/0307467 · doi:10.1063/1.1634390
Abstract
Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low temperature annealing of Ga(1-x)Mn(x)As, which is known to reduce the Mn_I concentration. The reciprocal space maps measured for all the investigated samples showed that the Ga(1-x)Mn(x)As layers are fully strained - i.e., they remain pseudomorphic to the GaAs (001) substrate - for the entire thickness of the samples used (in the present case over 100 nm). In all cases studied the XRD measurements revealed high crystalline perfection of both as-grown as well as annealed Ga(1-x)Mn(x)As epilayers
26 pages
References in corpus (5)
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- Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
- Fundamental Curie temperature limit in ferromagnetic GaMnAs
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- Intrinsic and Extrinsic Contributions to the Lattice Parameter of GaMnAs
- Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
- Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
- Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers
- Anomalous Lattice Parameter of Magnetic Semiconductor Alloys
- Effect of Misfit Strain in (Ga,Mn)(Bi,As) Epitaxial Layers on their Magnetic and Magneto-Transport Properties
- Bismuth doping induced enhancement of the spin-orbit coupling strength in the prototype dilute ferromagnetic semiconductor (Ga,Mn)As: a review