5 papers
MnAs dots grown on GaN(0001)-(1x1) surface
I. A. Kowalik, B. J. Kowalski, R. J. Iwanowski +3
MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic we…
Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers
J. Sadowski, M. Adell, J. Kanski +6
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was suppli…
Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +10
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, wh…
MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +5
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in si…
The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As
I. Kuryliszyn-Kudelska, J. Z. Domagala, T. Wojtowicz +4
Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn…