4 citations · 6 across the 6 of their papers we have counts for
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I. A. Kowalik, B. J. Kowalski, R. J. Iwanowski +3
MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic we…