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cond-mat.mtrl-sci2011★ 4 cited
Properties and characterization of ALD grown dielectric oxides for MIS structures
S. Gieraltowska, D. Sztenkiel, E. Guziewicz +7
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate t…
cond-mat.mtrl-sci2011
ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution
M. I. Lukasiewicz, B. Witkowski, M. Godlewski +8
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and coba…