Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs

Abstract

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si = SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H) devices.

References in corpus (1)

• Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator

Cited by in corpus (24)

• Intrinsic charge transport on the surface of organic semiconductors
• Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides
• Tunable Frohlich Polarons in Organic Single-Crystal Transistors
• Hall effect in the accumulation layers on the surface of organic semiconductors
• Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
• Organic small molecule field-effect transistors with Cytop(TM) gate dielectric: eliminating gate bias stress effects
• Hole mobility in organic single crystals measured by a "flip-crystal" field-effect technique
• Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors
• Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance
• Photo-induced charge transfer across the interface between organic molecular crystals and polymers
• Intrinsic carrier mobility of multi-layered MoS${}_2$ field-effect transistors on SiO${}_2$
• Approaching the Trap-Free Limit in Organic Single Crystal Field-Effect Transistors
• Effect of shallow traps on polaron transport at the surface of organic semiconductors
• Defect healing at room temperature in pentacene thin films and improved transistor performance
• Quantum coherence and carriers mobility in organic semiconductors
• Light-induced switching in the back-gated organic transistors with built-in conduction channel
• Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors
• Interaction of Organic Surfaces with Active Species in the High-Vacuum Environment
• Single crystal field-effect transistors based on an organic selenium-containing semiconductor
• Interlayer Thermal Conductivity of Rubrene Measured by ac-Calorimetry
• Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
• An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors
• Frequency-Dependent Photothermal Measurement of Transverse Thermal Diffusivity of Organic Semiconductors
• Interface steps in field effect devices