Spin-dependent tunnelling through a symmetric barrier

Abstract

The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.

3 pages, Submitted to Phys. Rev. B

References in corpus (3)

• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor

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