In situ epitaxial MgB2 thin films for superconducting electronics
arXiv:cond-mat/0203563 · doi:10.1038/nmat703
Abstract
A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like of 39 K, a (4.2K) of A/cm in zero field, and a of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB.
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