Characterization of high-quality MgB2(0001) epitaxial films on Mg(0001)
arXiv:cond-mat/0509181 · doi:10.1088/1367-2630/8/1/012
Abstract
High-grade MgB2(0001) films were grown on Mg(0001) by means of ultra-high-vacuum molecular beam epitaxy. Low energy electron diffraction and x-ray diffraction data indicate that thick films are formed by epitaxially oriented grains with MgB2 bulk structure. The quality of the films allowed angle-resolved photoemission and polarization dependent x-ray absorption measurements. For the first time, we report the band mapping along the Gamma-A direction and the estimation of the electron-phonon coupling constant l ~ 0.55 for the surface state electrons.
15 text pages, 6 figures Submitted for publication