Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs

Abstract

This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour as a function of electron density. When approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature. These features have much in common with those expected for an Anderson transition.

Extended version of the preprint cond-mat/0002436; 21 pages, 6 figures

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• Quantum kinetic approach for studying thermal transport in the presence of electron-electron interactions and disorder
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• Critical Behavior of a Strongly Disordered 2D Electron System: The Cases of Long-Range and Screened Coulomb Interactions
• Unconventional Metallicity and Giant Thermopower in a Strongly Interacting Two Dimensional Electron System
• Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime
• Collective depinning and sliding of a quantum Wigner solid in a 2D electron system
• Thermoelectric and electrical transport in mesoscopic two-dimensional electron gases
• Thermal correction to resistivity in dilute 2D systems
• Interaction corrections to the thermopower of the disordered two-dimensional electron gas