32 citations · 61 across the 3 of their papers we have counts for
3 papers
cond-mat.str-el2001★ 32 cited
Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs
R. Fletcher, V. M. Pudalov, A. D. B. Radcliffe +1
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperature…
cond-mat.dis-nn2000
Critical behavior of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFET's
R. Fletcher, V. M. Pudalov, A. D. B. Radcliffe +1
This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatu…
cond-mat.mes-hall1998★ 29 cited
Phonon drag thermopower and weak localization
A. Miele, R. Fletcher, E. Zaremba +3
Previous experimental work on a two-dimensional (2D) electron gas in a Si-on-sapphire device led to the conclusion that both conductivity and phonon drag thermopower are affe…