Spin-Orbit Torque and Magnetization Switching in 2D Ferromagnetic Devices

Abstract

Current-induced spin-orbit torque has emerged as a powerful technique for manipulating magnetization switching of ferromagnet/nonmagnet (FM/NM) based memory cell. By investigating nonequilibrium spin torque effect in a van der Waals heterobilayer, trigonal ${\text{Cr}}_3{\text{Te}}_4/{\text{PtTe}}_2$, the first-principles quantum transport calculations are applied to determine both local spin induction, resulting from Rashba-Edelstein effect in the FM layer, and spin current injection, flowing from the NM to the FM layer. Our work reveals that local spin induction significantly generates the fieldlike torque, which primarily governs the switching current in systems with strong in-plane magnetic anisotropy. Our work emphasizes the importance of optimizing spin Hall effect in the NM layer for perpendicular magnetic anisotropy (PMA)-based magnetization switching and maximizing the Rashba effect in the FM layer for in-plane magnetic anisotropy (IMA)-based switching.

15 pages, 14 figures

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