Tunneling magnetoresistance in a junction made of $X$-wave magnets with $X=p,d,f,g,i$

Abstract

We investigate the tunneling magnetoresistance (TMR) of a bilayer system made of $X$-wave magnets with $X=p,d,f,g,i$, where $X=d,g,i$ corresponds to altermagnets. A universal analytic formula is derived for the TMR ratio. It is proportional to $\left|J\right|/\left(N_X\Gamma \right)$ for small $\Gamma$, where $N_X$ is the number of the nodes of the $X$% -wave magnet, $J$ is the strength of the $X$-wave magnet, and $\Gamma$ is the self-energy. It is contrasted with the TMR ratio made of ferromagnets, where it is proportional to $J^2/{\Gamma }^2$ for small $\Gamma$. Therefore, the TMR ratio is larger in ferromagnets for $\left|J\right|>\Gamma$. However, the $X$-wave magnets are expected to achieve high-speed and ultra-dense memory owing to the zero net magnetization.

7 figures, 11 figures

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