paper

Correlated Topological Mixed-Valence Insulators in Moiré Hetero-Bilayers

arXiv:2407.14583 · doi:10.1103/PhysRevB.110.L201105

Abstract

Moiré transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of interaction-induced electronic phases that arise at a total commensurate filling of in moiré TMD heterobilayers, focusing specifically on their renormalized band-topology. We carry out a comprehensive self-consistent parton mean-field analysis on an interacting mixed-valence Hamiltonian describing AB-stacked MoTe/WSe to highlight different ingredients that arise due to "Mottness", band-flattening, an enhanced excitonic tendency, and band-inversion, leading to correlated topological semi-metals and insulators. We also propose a possible route towards realizing fractionalized insulators with emergent neutral fermionic excitations in this and other closely related platforms.

Main text: 7 pages, 3 figures, Supplementary information: 3 pages

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