Kondo effect and its destruction in hetero-bilayer transition metal dichalcogenides

Abstract

Moiré structures, along with line-graph-based $d$-electron systems, represent a setting to realize flat bands. One form of the associated strong correlation physics is the Kondo effect. Here, we address the recently observed Kondo-driven heavy fermion state and its destruction in AB-stacked hetero-bilayer transition metal dichalcogenides, which can be controlled by the gate voltages. By studying an effective interacting Hamiltonian using the slave spin approach, we obtained a phase diagram with the total filling factor and the displacement field strength as the tunable parameters. In an extended range of the tunable displacement field, our numerical results show that the relative filling of the $d$ orbital, which is associated with the highest moiré band from the $\mathrm{MoT}{\mathrm{e}}_2$ layer, is enforced to be ${\nu }_d\approx 1$ by the interaction. This agrees with the experimental observation. We also argue that the observed high coherence temperature scale could be explained by the non-negligible bandwidth of the $d$ orbital. Our results set the stage to address the amplified quantum fluctuations that the Kondo effect may produce in these structures and new regimes that the systems open up for Kondo-destruction quantum criticality.

arXiv comment22 pages, 11 figures

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• Topological Kondo semimetal and insulator in AB-stacked heterobilayer transition metal dichalcogenides
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• Twistronics and moiré superlattice physics in 2D transition metal dichalcogenides
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• SU(4) Kondo Lattice in Semiconductor Moiré Materials
• Selective Kondo screening and strange metallicity by sliding Dirac semimetals