Topological Kondo semimetal and insulator in AB-stacked heterobilayer transition metal dichalcogenides

Abstract

Recent experiments reported the realization of a heavy Fermi liquid in AB-stacked MoTe${}_2$/WSe${}_2$ heterobilayers. In this paper we show that the AB-stacked heterobilayer configuration is particularly suited to realize topological Kondo semimetal and topological Kondo insulator ground states at a doping of two holes per moiré unit cell. The small lattice mismatch between the MoTe${}_2$ and WSe${}_2$ monolayers and the different bandwidths of their highest lying moiré valence bands means that, in the experimentally relevant range of hole dopings, the MoTe${}_2$ layer is effectively a Mott insulator with only low-lying magnetic excitations Kondo-coupled to more itinerant electrons in the WSe${}_2$. The crucial consequence of the AB-stacking configuration is that the interlayer tunnelling connects orbitals of opposite parity in the two layers, leading to a chiral Kondo coupling. We show that the chiral Kondo coupling favors a topological Kondo semimetal at filling $\nu =1+1$, with a non-quantized spin Hall conductance arising from edge modes, whose spectrum and overlap with bulk states we determine. We further show that a spatially random strain field that locally breaks the rotation symmetry can convert the Kondo semimetal to a narrow gap topological Kondo insulator featuring a quantized spin Hall conductance.

12 pages, 11 figures

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• Magnetic Moiré Systems: a review
• Interplay between topology and electron-electron interactions in the moiré MoTe${}_2$/WSe${}_2$ heterobilayer
• Higher Chern bands in helical homotrilayer transition metal dichalcogenides
• SU(4) Kondo Lattice in Semiconductor Moiré Materials