paper

Momentum-Dependent Hybridization Gap and dispersive in-gap state of The Kondo Semiconductor SmB6

arXiv:1106.3449 · doi:10.1103/PhysRevB.86.075105

Abstract

We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB. We found a difference in the temperature dependence of the peaks at the X and points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the point.

5 pages, 3 figures

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