Theory of Spin Exciton in the Kondo Semiconductor
arXiv:0901.3247 · doi:10.1103/PhysRevLett.102.106402
Abstract
The Kondo semiconductor exhibits a spin and charge gap of approximately 15 meV. Close to the gap energy narrow dispersive collective excitations were identified by previous inelastic neutron scattering experiments. We present a theoretical analysis of these excitations. Starting from a periodic Anderson model for crystalline electric field (CEF) split 4f states we derive the hybridized quasiparticle bands in slave boson mean-field approximation and calculate the momentum dependent dynamical susceptibility in random phase approximation (RPA). We show that a small difference in the hybridization of the two CEF (quasi-) quartets leads to the appearance of two dispersive spin resonance excitations at the continuum threshold. Their intensity is largest at the antiferromagnetic (AF) zone boundary point and they have an upward dispersion which merges with the continuum less than halfway into the Brillouin zone. Our theoretical analysis explains the most salient features of previously unexplained experiments on the magnetic excitations of .
arXiv comment5 pages, 4 figures, To be published in Physical Review Letters
References in corpus (4)
- Feedback spin resonance in superconducting CeCuSi and CeCoIn
- Evidence for short-range antiferromagnetic fluctuations in Kondo-insulating YbB12
- Indirect and direct energy gaps in the Kondo semiconductor YbB12
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