Indirect and direct energy gaps in the Kondo semiconductor YbB12
arXiv:cond-mat/0503738 · doi:10.1143/JPSJ.74.1954
Abstract
Optical conductivity [] of the Kondo semiconductor YbB has been measured over wide ranges of temperature (=8690 K) and photon energy ( 1.3 meV). The data reveal the entire crossover of YbB from a metallic electronic structure at high into a semiconducting one at low . Associated with the gap development in , a clear onset is newly found at =15 meV for 20 K. The onset energy is identified as the gap width of YbB appearing in . This gap in σ(ω)σ(ω)$ is interpreted as arising from the direct gap. The absorption coefficient around the onset and the mIR peak indeed show characteristic energy dependences expected for indirect and direct optical transitions in conventional semiconductors.
arXiv comment4 pages, 3 figures, submitted to J. Phys. Soc. Jpn
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