Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

Abstract

AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage.

14 pages, 6 figures

Cited by in corpus (4)

• Optimization of scandium oxide growth by high pressure sputtering on silicon
• Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering
• Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
• High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation