Fast optoelectronic charge state conversion of silicon vacancies in diamond

Abstract

Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multi-qubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photo-current spectroscopy. We controllably convert the charge state between the optically active SiV${}^{-}$ and dark SiV${}^{2-}$ with MHz rates and 90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV${}^{-}$ photoluminescence under hole-capture, measure the intrinsic conversion time from the dark SiV${}^{2-}$ to the bright SiV${}^{-}$ to be 36.4(6.7)ms and demonstrate how it can be enhanced by a factor of $10^5$ via optical pumping. Moreover, we obtain new information on the defects that contribute to photo-conductivity, indicating the presence of substitutional nitrogen and divacancies.

5 figures

References in corpus (15)

• Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System
• Realization of a multi-node quantum network of remote solid-state qubits
• Indistinguishable photons from separated silicon-vacancy centers in diamond
• Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout
• Efficient readout of a single spin state in diamond via spin-to-charge conversion
• Low temperature investigations of single silicon vacancy colour centres in diamond
• Indistinguishable telecom band photons from a single erbium ion in the solid state
• Long-term data storage in diamond
• Optically coherent nitrogen-vacancy centers in μm-thin etched diamond membranes
• Efficient electrical spin readout of NV- centers in diamond
• Coherent control of a strongly driven silicon vacancy optical transition in diamond
• Neutral silicon vacancy centers in undoped diamond via surface control
• Probing metastable space-charge potentials in a wide bandgap semiconductor
• Room-temperature photo-chromism of silicon vacancy centers in CVD diamond
• Neutral Silicon Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Cited by in corpus (2)

• Electrically-triggered spin-photon devices in silicon
• Lifetime-Limited and Tunable Emission from Charge-Stabilized Nickel Vacancy Centers in Diamond