High-Resolution Short-Circuit Fault Localization in a Multi-Layer Integrated Circuit using a Quantum Diamond Microscope
arXiv:2302.01309 · doi:10.1103/PhysRevApplied.20.014036
Abstract
As integrated circuit (IC) geometry and packaging become more sophisticated with ongoing fabrication and design innovations, the electrical engineering community needs increasingly-powerful failure analysis (FA) methods to meet the growing troubleshooting challenges of multi-layer (with multiple metal layers) and multi-chip components. In this work, we investigate a new electronics FA method using a quantum diamond microscope (QDM) to image the magnetic fields from short-circuit faults. After quantifying the performance by detecting short-circuit faults in a multi-layer silicon die, we assess how a QDM would detect faults in a heterogeneously integrated (HI) die stack. This work establishes QDM-based magnetic imaging as a competitive technique for electronics FA, offering high spatial resolution, high sensitivity, and robust instrumentation. We anticipate these advantages to be especially useful for finding faults deep within chip-stack ICs with many metal layers, optically-opaque layers, or optically-scattering layers.
9 pages main text (6 figures), 5 pages supplementary information (4 figures)
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Cited by in corpus (5)
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- Fault Localization in a Microfabricated Surface Ion Trap using Diamond Nitrogen-Vacancy Center Magnetometry
- Sensing Electric Currents in an a-IGZO TFT-Based Circuit Using a Quantum Diamond Microscope