A compact and versatile cryogenic probe station for quantum device testing

Abstract

Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work we present a probe station that can be operated from room temperature down to below 2K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization towards building scalable quantum circuits.

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Cited by in corpus (3)

• Two-qubit logic with anisotropic exchange in a fin field-effect transistor
• Fully autonomous tuning of a spin qubit
• Bootstrapping, autonomous testing, and initialization system for Si/Si${}_x$Ge${}_{1-x}$ multi-quantum-dot devices