Attractive and repulsive fluctuation-induced pressure in peptide films deposited on semiconductor substrates
arXiv:2212.07129 · doi:10.3390/sym14102196
Abstract
We consider the fluctuation-induced (Casimir) pressure in peptide films deposited on GaAs, Ge, and ZnS substrates which are either in dielectric or metallic state. Calculations of the Casimir pressure are performed in the framework of fundamental Lifshitz theory employing the frequency-dependent dielectric permittivities of all involved materials. The electric conductivity of semiconductor substrates is taken into account within the experimentally and thermodynamically consistent approach. According to our results, the Casimir pressure in peptide films deposited on dielectric-type semiconductor substrates vanishes for some definite film thickness, is repulsive for thinner and attractive for thicker films. The dependence of this effect on the fraction of water in the film and on the static dielectric permittivity of semiconductor substrate is determined. For the metallic-type semiconductor substrates, the Casimir pressure in peptide coatings is shown to be always repulsive. Possible applications of these results to the problem of stability of thin coatings in microdevices are discussed.
arXiv comment14 pages, 5 figures
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Cited by in corpus (3)
- Fluctuation-induced dispersion forces on thin DNA films
- Comparison of the Lifshitz Theory Using the Nonconventional Fit of Response Functions with Precise Measurements of the Casimir Force
- The Casimir free energy of peptide films on a silicon substrate: Impact of dielectric-to-metal transition in silicon and nanoparticles in peptide