How to modify the van der Waals and Casimir forces without change of dielectric permittivity

Abstract

We propose a new experiment on measuring the Casimir force and its gradient between an Au-coated sphere and two different plates made of doped semiconductors. The concentrations of charge carriers in the plates are chosen slightly below and above the critical density at which the Mott-Anderson insulator-metal transition occurs. We calculate changes in the Casimir force and the Casimir pressure due to the insulator-metal transition using the standard Lifshitz theory and the phenomenological approach neglecting the contribution of free charge carriers in the dielectric permittivity of insulator materials (this approach was recently supported by the measurement data of several experiments). It is demonstrated that for the special selection of semiconductor materials (S- or Se-doped Si, B-doped diamond) calculation results using both theoretical approaches differ significantly and the predicted effects are easily detectable using the existing laboratory setups. In the case that the prediction of the phenomenological approach is confirmed, this would open opportunities to modify the van der Waals and Casimir forces with almost no change of room-temperature dielectric permittivity.

21 pages, 10 figures, to appear in J. Phys.: Cond. Matter

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• Casimir free energy of dielectric films: Classical limit, low-temperature behavior and control
• Casimir and van der Waals forces: Advances and problems
• Nonperturbative theory of atom-surface interaction: Corrections at short separations
• Apparatus to probe the influence on the Casimir effect of the Mott-Anderson metal-insulator transition in doped semiconductors
• Attractive and repulsive fluctuation-induced pressure in peptide films deposited on semiconductor substrates