The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface
arXiv:2208.07007 · doi:10.1103/PhysRevB.106.174410
Abstract
The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer between the Fe and MgO layers enhances PMA significantly. In this study, we perform x-ray magnetic circular dichroism measurements on Fe/LiF/MgO multilayers to reveal the origin of the PMA enhancement. We find that the LiF insertion increases the orbital-magnetic-moment anisotropy and thus the magnetic anisotropy energy. We attribute the origin of this orbital-magnetic-moment-anisotropy enhancement to the stronger electron localization and electron-electron correlation or the better interface quality with fewer defects.
References in corpus (6)
- First-principles investigation of the very large Perpendicular Magnetic Anisotropy at Fe|MgO Interfaces
- Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer
- Elucidating the Voltage Controlled Magnetic Anisotropy
- Perpendicular magnetic anisotropy at the Fe/MgAlO interface: Comparative first-principles study with Fe/MgO
- Anisotropic spin distribution and perpendicular magnetic anisotropy in the layered ferromagnetic semiconductor (Ba,K)(Zn,Mn)As
- Effect(s) of Cobalt Substitution in -(Fe,Co)Pt Thin Films