12 citations · 35 across the 9 of their papers we have counts for
10 papers
Ohm's law for information revealed by a skyrmion Maxwell's demon
Soma Miki, Yoshishige Suzuki, Ryo Ishikawa +10
Reducing the energy cost of computation-a pressing issue in the age of AI-requires a framework for circuit design based on information thermodynamics. By extending non-equilibrium…
Cryogenic-temperature Grain-to-grain Epitaxial Growth of High-quality Ultrathin CoFe Layer on MgO Tunnel Barrier for High-performance Magnetic Tunnel Junctions
Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki +3
One candidate for ultimate non-volatile memory with ultralow power consumption is magneto-resistive random-access memory (VC-MRAM). To develop VC-MRAM, it is important to fabricate…
Spin polarization driven by molecular vibrations leads to enantioselectivity in chiral molecules
Shinji Miwa, Tatsuya Yamamoto, Takashi Nagata +9
Chirality pervades multiple scientific domains-physics, chemistry, biology, and astronomy-and profoundly influences their foundational principles. Recently, the chirality-induced s…
Coherent Driving of a Single Nitrogen Vacancy Center by a Resonant Magnetic Tunnel Junction
Gerald Q. Yan, Nathan McLaughlin, Tatsuya Yamamoto +5
Nitrogen-vacancy (NV) centers, atomic spin defects in diamond, represent an active contender for advancing transformative quantum information science (QIS) and innovations. One of…
Interfacial Fe segregation and its influence on magnetic properties of CoFeB/MgFeO multilayers
Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki +3
We investigated the effect of Fe segregated from partially Fe-substituted MgO (MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray photoelectron spectroscopy (XPS)…
Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers
Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki +4
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effec…
The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface
Shoya Sakamoto, Takayuki Nozaki, Shinji Yuasa +2
The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demo…
Electric-Field-Induced Coherent Control of Nitrogen Vacancy Centers
Gerald Q. Yan, Senlei Li, Tatsuya Yamamoto +6
Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-c…
Enhancement of perpendicular magnetic anisotropy and its electric field-induced change through interface engineering in Cr/Fe/MgO
A. Kozioł-Rachwał, T. Nozaki, K. Freindl +3
Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a l…
RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance
K. Konishi, D. K. Dixit, A. A. Tulapurkar +6
The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. Th…