Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform
arXiv:2203.11775 · doi:10.1038/s41467-022-34100-3
Abstract
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report the first silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon. Owing to a leaky-wave silicon nitride-on-silicon design, the devices achieved a high external quantum efficiency of > 60% across a record wavelength span from ~400 nm to ~640 nm, an opto-electronic bandwidth up to 9 GHz, and an avalanche gain-bandwidth product up to 173 30 GHz. As an example, a photodetector was integrated with a wavelength-tunable microring in a single chip for on-chip power monitoring.
20 pages, 21 figures
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Cited by in corpus (8)
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- Chip-scale sub-Doppler atomic spectroscopy enabled by a metasurface integrated photonic emitter
- On-chip 7 GHz acousto-optic modulators for visible wavelengths
- Thermally Induced Refractive Index Trimming of Visible-Light Silicon Nitride Waveguides Using Suspended Heaters
- Broadband Waveguide-Coupled Photodetectors in a Submicrometer-Wavelength Silicon Photonics Platform
- Hybrid electrostatic-piezo MEMS photonic integrated modulators