Electron beam splitting at topological insulator surface states and a proposal for electronic Goos-Hanchen shift measurement
arXiv:2202.09537 · doi:10.1103/PhysRevB.105.085415
Abstract
The hexagonal warping effect on transport properties and Goos-Hänchen (GH) lateral shift of electrons on the surface of a topological insulator with a potential barrier is investigated theoretically. Due to the warped Fermi surface for incident electron beams, we can expect two propagating transmitted beams corresponding to the occurrence of double refraction. The transmitted beams have spin orientations locked to their momenta so one of the spin directions rotates compared to the incident spin direction. Based on a low-energy Hamiltonian near the Dirac point and considering Gaussian beams, we derive expressions for calculating lateral shifts in the presence of warping effect. We study the dependence of transmission probabilities and GH shifts of transmitted beams on system parameters in detail by giving an explanation for the appearance of large peaks in the lateral shifts corresponding to their transmission peaks. It is shown that the separation between two transmitted beams through their different GH shifts can be as large as a few micrometers, which is large enough to be observed experimentally. Finally, we propose a method to measure the GH shift of electron beams based on the transverse magnetic focusing technique in which, by tuning an applied magnetic field, a detectable resonant path for electrons can be induced.
11 pages, 8 figures
References in corpus (20)
- Chiral tunneling and the Klein paradox in graphene
- Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
- Electron Beam Supercollimation in Graphene Superlattices
- Quantum Goos-Hanchen effect in graphene
- Observation of the Goos-Hänchen shift in graphene via weak measurements
- Electron optics with magnetic vector potential barriers in graphene
- Creating and Steering Highly Directional Electron Beams in Graphene
- Giant Goos-Hänchen Shift in Graphene Double-barrier Structures
- Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier
- Giant quantized Goos-Hänchen effect on the surface of graphene in quantum Hall regime
- Goos-Hanchen shift of a spin-wave beam transmitted through anisotropic interface between two ferromagnets
- Controllable Goos-Hänchen shifts and spin beam splitter for ballistic electrons in a parabolic quantum well under a uniform magnetic field
- Surface states scattering from a step defect in topological insulator Bi_{2}Te_{3}
- Flat-lens focusing of electrons on the surface of a topological insulator
- Spintronic signatures of Klein tunneling in topological insulators
- Anomalous spatial shifts in interface electronic scattering
- Spin- and valley-dependent Goos-Hanchen effect in silicene and gapped graphene structures
- Gate-controlled valley transport and Goos-Hänchen effect in monolayer WS
- Tunnel Magnetoresistance scan of a pristine three-dimensional topological insulator
- Analysis of Scanned Probe Images for Magnetic Focusing in Graphene