Magnetic field robust high quality factor NbTiN superconducting microwave resonators

Abstract

We systematically study the performance of compact lumped element planar microwave $\mathrm{N}{\mathrm{b}}_{70}\mathrm{T}{\mathrm{i}}_{30}\mathrm{N}$ (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at $T=2.2$ K, we find internal quality factors $Q_{\mathrm{int}}\simeq$ $2\cdot 10^5$ for NbTiN resonators grown on pristine Si substrates, while resonators grown on thermally oxidized substrates show a reduced value of $Q_{\mathrm{int}}\simeq$ $1\cdot 10^4$, providing evidence for additional loss channels for the latter substrate. In addition, we investigate the $Q$-factors of the resonators on pristine Si substrates at millikelvin temperatures to asses their applicability for quantum applications. We find $Q_{\mathrm{int}}\simeq$ $2\cdot 10^5$ in the single photon regime and $Q_{\mathrm{int}}\simeq$ $5\cdot 10^5$ in the high power regime at $T=7$ mK.

arXiv comment14 pages, 4 figures

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