Spin digitizer for high-fidelity readout of a cavity-coupled silicon triple quantum dot

Abstract

An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate structures hindering device scaling or impose stringent constraints on the tuning configuration of the sensed quantum dots. Here, we operate an in-line charge sensor within a triple quantum dot, where one of the dots is coupled to a microwave cavity and used to readout the charge states of the other two dots. Owing to the proximity of the charge sensor, we observe a near-digital sensor response with a power signal-to-noise ratio >450 at an integration time of $t_{\mathrm{int}}$ = 1 $\mu$s. Despite small singlet-triplet splittings $\approx$40 $\mu$eV, we further utilize the sensor to measure the spin relaxation time of a singlet-triplet qubit, achieving an average single-shot spin readout fidelity >99%. Our approach enables high-fidelity spin readout, combining minimal device overhead with flexible qubit operation in semiconductor quantum devices.

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• Fingerprints of Qubit Noise in Transient Cavity Transmission
• Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator
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• Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor
• Electrical readout of spins in the absence of spin blockade
• Theory of the Simultaneous Transient Dispersive Readout of Multiple Spin Qubits
• Intrinsic Noise of the Single Electron Box
• High-fidelity spin readout via the double latching mechanism