Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements
arXiv:2102.11999 · doi:10.1063/5.0036419
Abstract
We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT leads to a lower noise floor in the experimental setup and enables more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.
10 pages, 13 figures
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- Coherent-Incoherent Crossover of Charge and Neutral Mode Transport as Evidence for the Disorder-Dominated Fractional Edge Phase
- Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier