Low-noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors

Abstract

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and current noises has been developed with frequency dependence up to 1 MHz. These HEMTs exhibit low dissipation, excellent noise performance and can advantageously replace traditional Si-JFETs for the readout of high impedance thermal sensor and semiconductor ionization cryogenic detectors. Our model predicts that cryogenic germanium detectors of 30 g with 10 eV heat and 20 eVee baseline resolution are feasible if read out by HEMT based amplifiers. Such resolution allows for high discrimination between nuclear and electron recoils at low threshold. This capability is of major interest for Coherent Elastic Neutrino Scattering and low-mass dark matter experiments such as Ricochet and EDELWEISS.

arXiv commentsubmitted to Journal of Low Temperature Physics, special issue for the 18th International Workshop on Low Temperature Detectors 22-26 July 2019 - Milano, Italia

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Cited by in corpus (8)

• First germanium-based constraints on sub-MeV Dark Matter with the EDELWEISS experiment
• Coherent elastic neutrino-nucleus scattering: EFT analysis and nuclear responses
• Direct Detection of Dark Matter -- APPEC Committee Report
• Development of data processing and analysis pipeline for the RICOCHET experiment
• Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements
• Two-Stage Cryogenic HEMT Based Amplifier For Low Temperature Detectors
• Sub-GeV Dark Matter Searches with EDELWEISS: New results and prospects
• HEMT-based 1K front-end electronics for the heat and ionization Ge CryoCube of the future RICOCHET CE$\nu$NS experiment