A HEMT-Based Cryogenic Charge Amplifier with sub-100 eVee Ionization Resolution for Massive Semiconductor Dark Matter Detectors

Abstract

We present the measured baseline ionization resolution of a HEMT-based cryogenic charge amplifier coupled to a CDMS-II detector. The amplifier has been developed to allow massive semiconductor dark matter detectors to retain background discrimination at the low recoil energies produced by low-mass WIMPs. We find a calibrated baseline ionization resolution of ${\sigma }_E=91{\text{eV}}_{ee}$. To our knowledge, this is the best direct ionization resolution achieved with such massive ($\approx$150 pF capacitance) radiation detectors.

Published in Nuclear Instruments and Methods in Physics Research Section A

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• First Dark Matter Search Results from the XENON1T Experiment
• First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector
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• Low-noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors
• Cryogenic amplification of image-charge detection for readout of quantum states of electrons on liquid helium
• Two-Stage Cryogenic HEMT Based Amplifier For Low Temperature Detectors
• Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier
• Characterization of FBK NUV-HD-Cryo SiPMs near LHe temperature
• HEMT-based 1K front-end electronics for the heat and ionization Ge CryoCube of the future RICOCHET CE$\nu$NS experiment