Collinear antiferromagnetic order in URu$_2$Si$_{2-x}$P$_x$ revealed by neutron diffraction

M. C. Rahn; A. Gallagher; F. Orlandi; D. D. Khalyavin; C. Hoffmann; P. Manuel; R. Baumbach; M. Janoschek

doi:10.1103/PhysRevB.103.214403

paper

Collinear antiferromagnetic order in URu $_{2}$ Si $_{2 - x}$ P $_{x}$ revealed by neutron diffraction

arXiv:2102.01178 · doi:10.1103/PhysRevB.103.214403

Abstract

The hidden order phase in URu $_{2}$ Si $_{2}$ is highly sensitive to electronic doping. A special interest in silicon-to-phosphorus substitution is due to the fact that it may allow one, in part, to isolate the effects of tuning the chemical potential from the complexity of the correlated $f$ and $d$ electronic states. We investigate the new antiferromagnetic phase that is induced in URu $_{2}$ Si $_{2 - x}$ P $_{x}$ at $x ≳ 0.27$ . Time-of-flight neutron diffraction of a single crystal ( $x = 0.28$ ) reveals $c$ -axis collinear $q_{m} = (\frac{1}{2}, \frac{1}{2}, \frac{1}{2})$ magnetic structure with localized magnetic moments ( $\approx 2.1 μ_{B}$ ). This points to an unexpected analogy between the (Si,P) and (Ru,Rh) substitution series. Through further comparisons with other tuning studies of URu $_{2}$ Si $_{2}$ , we are able to delineate the mechanisms by which silicon-to-phosphorus substitution affects the system. In particular, both the localization of itinerant 5 $f$ electrons as well as the choice of $q_{m}$ appears to be consequences of the increase in chemical potential. Further, enhanced exchange interactions are induced by chemical pressure and lead to magnetic order, in which an increase in inter-layer spacing may play a special role.

Collinear antiferromagnetic order in URu2​Si2−x​Px​ revealed by neutron diffraction

Abstract

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Collinear antiferromagnetic order in URu $_{2}$ Si $_{2 - x}$ P $_{x}$ revealed by neutron diffraction