paper

The role of band filling in tuning the high field phases of URu2Si2

arXiv:1704.05025 · doi:10.1103/PhysRevB.96.085141

Abstract

We present a detailed study of the low temperature and high magnetic field phases in the chemical substitution series URuSiP using electrical transport and magnetization in pulsed magnetic fields up to 65T. Within the hidden order region (0 0.035) the high field ordering is robust even as the hidden order temperature is suppressed. Earlier work shows that for 0.035 0.26 there is a Kondo lattice with a no-ordered state that is replaced by antiferromagnetism for 0.26 0.5. We observe a simplified continuation of the high field ordering in the no-order -region and an enhancement of the high field state upon the destruction of the antiferromagnetism with magnetic field. These results closely resemble what is seen for URuRhSi\footnote{The concentration in this paper is defined as URuRhSi while the chemical formula in the literature is given as U(RuRh)Si [24-26]}, from which we infer that charge tuning uniformly controls the ground state of URuSi, regardless of whether s/p or d-electrons are replaced. This provides guidance for determining the specific factors that lead to hidden order versus magnetism in this family of materials.

5 pages, 5 figures and a supplementary

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