paper

Isoelectronic perturbations to --electron hybridization and the enhancement of hidden order in URuSi

arXiv:2009.11819 · doi:10.1073/pnas.2026591118

Abstract

Electrical resistivity measurements were performed on single crystals of URuOsSi up to = 0.28 under hydrostatic pressure up to = 2 GPa. As the Os concentration, , is increased, (1) the lattice expands, creating an effective negative chemical pressure (), (2) the hidden order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic (LMAFM) phase, and (3) less external pressure is required to induce the HO to LMAFM phase transition. We compare the , phase behavior reported here for the URuOsSi system with previous reports of enhanced HO in URuSi upon tuning with , or similarly in URuFeSi upon tuning with positive (). It is noted that pressure, Fe substitution, and Os substitution are the only known perturbations that enhance the HO phase and induce the first order transition to the LMAFM phase in URuSi. We present a scenario in which the application of pressure or the isoelectronic substitution of Fe and Os ions for Ru results in an increase in the hybridization of the U-5- and transition metal -electron states which leads to electronic instability in the paramagnetic phase and a concurrent stability of HO (and LMAFM) in URuSi. Calculations in the tight binding approximation are included to determine the strength of hybridization between the U-5 electrons and each of the isoelectronic transition metal -electron states of Fe, Ru, and Os.

15 pages, 11 figures

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