Superballistic electron flow through a point contact in a Ga[Al]As heterostructure
arXiv:2012.03570 · doi:10.1103/PhysRevResearch.3.023033
Abstract
We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around for all investigated electron densities and point contact widths. For high electron densities this conductance exceeds the fundamental ballistic limit (Sharvin limit). These observations are in agreement with a viscous electron transport model and previous experiments in graphene.
arXiv comment5 pages, 2 figures
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