Charged exciton kinetics in monolayer MoSe near ferroelectric domain walls in periodically poled LiNbO
arXiv:2010.01416 · doi:10.1021/acs.nanolett.0c03810
Abstract
Monolayers of semiconducting transition metal dichalcogenides are a strongly emergent platform for exploring quantum phenomena in condensed matter, building novel opto-electronic devices with enhanced functionalities. Due to their atomic thickness, their excitonic optical response is highly sensitive to their dielectric environment. In this work, we explore the optical properties of monolayer thick MoSe straddling domain wall boundaries in periodically poled LiNbO. Spatially-resolved photoluminescence experiments reveal spatial sorting of charge and photo-generated neutral and charged excitons across the boundary. Our results reveal evidence for extremely large in-plane electric fields of 3000\,kV/cm at the domain wall whose effect is manifested in exciton dissociation and routing of free charges and trions toward oppositely poled domains and a non-intuitive spatial intensity dependence. By modeling our result using drift-diffusion and continuity equations, we obtain excellent qualitative agreement with our observations and have explained the observed spatial luminescence modulation using realistic material parameters.
arXiv comment29 pages, 6 figures, submetted material
References in corpus (35)
- Atomically thin MoS2: A new direct-gap semiconductor
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Excitons in atomically thin transition metal dichalcogenides
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
- High-Performance Hybrid Silicon and Lithium Niobate Mach-Zehnder Modulators for 100 Gbit/s and Beyond
- Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices
- Magic continuum in twisted bilayer WSe2
- Monolithic Ultrahigh-Q Lithium Niobate Microring Resonator
- Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier
- Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
- Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
- Electro-optically tunable microring resonators in lithium niobate
- Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields
- Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
- Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates
- Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization
- The dielectric impact of layer distances on exciton and trion binding energies in van der Waals heterostructures
- Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit
- Exciton diffusion in monolayer semiconductors with suppressed disorder
- Quantum diffusion of dipole-oriented indirect excitons in coupled quantum wells
- Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
- Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2
- Interlayer excitons in van der Waals heterostructures: Binding energy, Stark shift, and field-induced dissociation
- Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots
- Excitonic Stark effect in MoS monolayers
- Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS
- Interface excitons at lateral heterojunctions in monolayer semiconductors
- Polar Coupling Enabled Nonlinear Optical Filtering at MoS/Ferroelectric Heterointerfaces
- Trion Species-Resolved Quantum Beats in MoSe2
- Inlaid ReS2 Quantum Dots in Monolayer MoS2
- Effect of the Intrinsic Width on the Piezoelectric Force Microscopy of a Single Ferroelectric Domain Wall
Cited by in corpus (4)
- Excitonic Tonks-Girardeau and charge-density wave phases in monolayer semiconductors
- Pyroelectric doping reversal of MoS2 p-n junctions on ferroelectric domain walls probed by photoluminescence
- Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures
- Investigating the Ferroelectric Potential Landscape of 3R-MoS through Optical Measurements