Molecular beam epitaxy of superconducting Sn${}_{1-x}$In${}_x$Te thin films

Abstract

We report a systematic study on the growth conditions of Sn${}_{1-x}$In${}_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_{\mathrm{c}}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn${}_{1-x}$In${}_x$Te beyond the bulk solubility limit at ambient pressure ($x$ = 0.5). $T_{\mathrm{c}}$ shows a dome-shaped dependence on In content $x$ with the highest $T_{\mathrm{c}}$ = 4.20 K at $x$ = 0.55, being consistent to that reported for bulk crystals. The well-regulated Sn${}_{1-x}$In${}_x$Te films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.

20 pages, 6 figures

References in corpus (6)

• Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Observation of Majorana Fermions in Ferromagnetic Atomic Chains on a Superconductor
• Odd-Parity Pairing and Topological Superconductivity in a Strongly Spin-Orbit Coupled Semiconductor
• Studies of the superconducting properties of Sn1-xInxTe (x=0.38 to 0.45) using muon-spin spectroscopy
• Superconductivity in Sn${}_{1-x}$In${}_x$Te thin films grown by molecular beam epitaxy

Cited by in corpus (2)

• Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films
• Superconductivity in tin telluride films grown by molecular beam epitaxy