Molecular beam epitaxy of superconducting SnInTe thin films
arXiv:2009.14494 · doi:10.1103/PhysRevMaterials.4.091202
Abstract
We report a systematic study on the growth conditions of SnInTe thin films by molecular beam epitaxy for maximization of superconducting transition temperature . Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ( = 0.66) into Sn site in a single phase of SnInTe beyond the bulk solubility limit at ambient pressure ( = 0.5). shows a dome-shaped dependence on In content with the highest = 4.20 K at = 0.55, being consistent to that reported for bulk crystals. The well-regulated SnInTe films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
arXiv comment20 pages, 6 figures
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