Tailoring band-structure and band-filling in a simple cubic (IV, III) - VI superconductor

Abstract

Superconductivity and its underlying mechanisms are one of the most active research fields in condensed-matter physics. An important question is how to enhance the transition temperature $T_{\mathrm{c}}$ of a superconductor. In this respect, the possibly positive role of valence-skipping elements in the pairing mechanism has been attracting considerable interest. Here we follow this pathway and successfully enhance $T_{\mathrm{c}}$ up to almost 6 K in the simple chalcogenide SnTe known as topological crystalline insulator by doping the valence-skipping element In and codoping Se. A high-pressure synthesis method enabled us to form single-phase solid solutions Sn${}_{1-x}$In${}_x$Te${}_{1-y}$Se${}_y$ over a wide composition range while keeping the cubic structure necessary for the superconductivity. Our experimental results are supported by density-functional theory calculations which suggest that even higher $T_{\mathrm{c}}$ values would be possible if the required doping range were experimentally accessible.

main text: 5 pages, 4 Figures, Supplemental Material: 8 pages, 6 Figures

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• Molecular beam epitaxy of superconducting Sn${}_{1-x}$In${}_x$Te thin films
• Versatile electronic states in epitaxial thin films of (Sn-Pb-In)Te: from topological crystalline insulator and polar semimetal to superconductor
• Enhancement of superconductivity and its relation to lattice expansion in InTe
• Chemical enhancement of superconductivity in LaRu3Si2 with mode-selective coupling between kagome phonons and flat bands
• High-pressure synthesis and superconducting properties of NaCl-type In1-xPbxTe (x = 0-0.8)