Effect of Strain on Band Engineering in Gapped Graphene
arXiv:2007.04579 · doi:10.1140/epjb/s10051-021-00049-3
Abstract
We study the effect of strain on the band engineering in gapped graphene subject to external sources. By applying the Floquet theory, we determine the effective Hamiltonian of electron dressed by a linearly, circularly and an elliptically polarized dressing field in the presence of strain along armchair and zigzag directions. Our results show that the energy spectrum exhibits different symmetries and for the strainless case it takes an isotropic and anisotropic forms whatever the values of irradiation intensity, whereas it is linear as in the case of pristine graphene. It increases slowly when strain is applied along the armchair direction but rapidly for the zigzag case. Moreover, it is found that the renormalized band gap changes along different strain magnitudes and does not change for the polarization phase compared to linear and circular polarizations where its values change oppositely.
arXiv comment18 pages, 10 figures. Clarifications and references added
References in corpus (27)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Chiral tunneling and the Klein paradox in graphene
- Room-Temperature Quantum Hall Effect in Graphene
- Artificial gauge potentials for neutral atoms
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Substrate-induced bandgap in graphene on hexagonal boron nitride
- Photovoltaic Hall effect in graphene
- Unconventional Integer Quantum Hall effect in graphene
- A tight-binding approach to uniaxial strain in graphene
- Light-induced gauge fields for ultracold atoms
- Gauge fields in graphene
- Effects of Strain on Electronic Properties of Graphene
- Photon-assisted transport in semiconductor nanostructures
- Spin transport in proximity induced ferromagnetic graphene
- Artificial graphene as a tunable Dirac material
- High frequency electric field induced nonlinear effects in graphene (review)
- Origin of band gaps in graphene on hexagonal boron nitride
- Symmetry-based approach to electron-phonon interactions in graphene
- Effective Hamiltonians for periodically driven systems
- All-optical band engineering of gapped Dirac materials
- Local Energy Gap in Deformed Carbon Nanotubes
- Band gap in graphene induced by vacuum fluctuations
- Magnetoelectronic properties of graphene dressed by a high-frequency field
- Magnetic properties of a two-dimensional electron gas strongly coupled to light
- Resonant inverse Faraday effect in nanorings
- Light-induced spin polarizations in quantum rings