Gate-tunable non-volatile photomemory effect in MoS${}_2$ transistors

Abstract

Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS${}_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS${}_2$ using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS${}_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodoping, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS${}_2$ phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures.

References in corpus (7)

• Boron nitride substrates for high-quality graphene electronics
• Valley polarization in MoS2 monolayers by optical pumping
• The Valley Hall Effect in MoS2 Transistors
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Mechanisms of photoconductivity in atomically thin MoS2
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Cited by in corpus (2)

• Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures
• Local photodoping in monolayer MoS2