Twisted bilayer graphene fabricated by direct bonding in a high vacuum

Abstract

Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.

References in corpus (5)

• Flat Bands in Slightly Twisted Bilayer Graphene
• Raman spectroscopy of epitaxial graphene on a SiC substrate
• Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene
• Numerical studies of confined states in rotated bilayers of graphene
• Band-unfolding approach to Moirè-induced band-gap opening and Fermi-level-velocity reduction in twisted bilayer graphene